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    GB488U PDF Datasheet浏览和下载

    型号:
    GB488U
    PDF下载:
    下载PDF文件
    内容描述:
    [300A Stud Type Device Series-Standard Rectifier Diodes]
    文件大?。?/dt>
    1677 K
    文件页数:
    4 Pages
    品牌Logo:
    品牌名称:
    THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
    • 供货商
    • IC型号
    • 厂家
    • 批号
    • 数量
    • 封装
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    • 操作
     浏览型号GB488U的Datasheet PDF文件第2页浏览型号GB488U的Datasheet PDF文件第3页浏览型号GB488U的Datasheet PDF文件第4页 
    GB488U/GB489UR
    Pb Free Plating Product
    GB488U/GB489UR
    Pb
    300A Stud Type Device Series-Standard Rectifier Diodes
    Feature
    Hermetic ceramics-metal stud structure
    Conform to national standard JB/T8949.2-1998
    Capacity of supporting high surge current
    I
    F(AV)
    V
    RRM
    I
    FSM
    I
    2
    t
    8.25
    64
    300A
    100-5000V
    KA
    KA
    2
    S
    Stud cathode and stud anode version
    Typical Application
    DC motor controls Controls DC power
    supply Turbo generator exciter
    AC switch and thermal control Synchronous motor exditation
    SYMBOL
    CHARCTERISTIC
    Mean forward current
    RMS current
    Repettive peak reverse
    voltage
    Repetitive peak current
    Surge on-state current
    TEST CONDITIONS
    180ehalf sine wawe
    sink
    50HZ Single heat
    T
    J
    (k)
    150
    150
    VALUE
    Min
    Max
    300
    3700
    UNIT
    A
    A
    V
    mA
    KA
    I
    F(AV)
    I
    F(RMS)
    V
    RRM
    I
    RRM
    I
    FSM
    I
    2
    t
    V
    TO
    r
    T
    V
    FM
    I
    rm
    t
    rr
    Q
    rr
    R
    th(j-h)
    F
    M
    T
    stq
    W
    t
    T
    C
    =98k
    V
    DRM
    &V
    RRM
    tp=10ms
    V
    DSM
    &V
    RSM=
    V
    DRM
    &V
    RRM+200V
    V
    RM=
    V
    RRM
    10ms half sine wave
    150
    150
    150
    150
    100
    5000
    15
    8.25
    68
    0.83
    0.91
    1.33
    70
    4.0
    140
    0.090
    I
    2
    t
    for fusing
    Threshold voltage
    On-state slop resistance
    Peak on-state voltage
    Reverse recovery
    Reverse recovery time
    V
    R
    =0.6V
    RRM
    KA
    2
    S
    V
    m?
    V
    A
    us
    uC
    k/W
    N
    k
    g
    Recovered charge
    Thermal impedance
    node to the shell
    Mounting force
    Stored temperature
    Weight
    I
    TM
    =30A,F=9.0KN
    I
    TM
    =30A tq=1000us
    Di/dt=-20A/us.
    V
    r
    =50V
    180
    esine
    wave, single heat sink
    150
    150
    85
    -40
    470
    120
    200
    Rev.08T
    ? 1995 Thinki Semiconductor Co., Ltd.
    Page 1/4
    http://www.thinkisemi.com.tw/
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