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    C10P60FD PDF Datasheet浏览和下载

    型号:
    C10P60FD
    PDF下载:
    下载PDF文件
    内容描述:
    [10.0 Ampere Heatsink Dual Doubler Polarity Fast Recovery Rectifiers]
    文件大?。?/dt>
    238 K
    文件页数:
    2 Pages
    品牌Logo:
    品牌名称:
    THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
     浏览型号C10P60FD的Datasheet PDF文件第2页 
    C10P20FD thru C10P60FD
    C10P20FD/C10P40FD/C10P60FD
    Pb Free Plating Product
    Pb
    10.0 Ampere Heatsink Dual Doubler Polarity Fast Recovery Rectifiers
    Features
    Fast switching for high efficiency
    Low forward voltage drop
    High current capability
    Low reverse leakage current
    High surge current capability
    TO-220AB(TO-220-3L)
    .419(10.66)
    .387(9.85)
    .139(3.55)
    MIN
    Unit:inch(mm)
    .196(5.00)
    .163(4.16)
    .054(1.39)
    .045(1.15)
    .269(6.85)
    .226(5.75)
    .624(15.87)
    .50(12.7)MIN
    .038(0.96)
    .019(0.50)
    .177(4.5)MAX
    Application
    Automotive Inverters and Solar Inverters
    Car Audio Amplifiers and Sound Device Systems
    Plating Power Supply,Motor Control,UPS and SMPS etc.
    .548(13.93)
    .025(0.65)MAX
    Mechanical Data
    Case: Open Heatsink Package TO-220AB
    Epoxy: UL 94V-0 rate flame retardant
    Terminals: Solderable per MIL-STD-202 method 208
    Polarity: As marked on diode body
    Mounting position: Any
    Weight: 2.2 gram approximately
    .1(2.54)
    .1(2.54)
    Case
    Case
    Case
    Case
    Positive
    Common Cathode
    Suffix "F"
    Negative
    Common Anode
    Suffix "FR"
    Doubler
    Tandem Polarity
    Suffix "FD"
    Series
    Tandem Polarity
    Suffix "FS"
    MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
    Rating at 25℃ ambient temperature unless otherwise specified.
    Single phase,half wave,60Hz,resistive or inductive load.
    For capacitive load, derate current by 20%.
    PARAMETER
    SYMBOL
    C10P20FD C10P40FD C10P60FD
    200
    140
    200
    400
    280
    400
    10.0
    600
    420
    600
    UNIT
    Maximum Recurrent Peak Reverse Voltage
    Maximum RMS Voltage
    Maximum DC Blocking Voltage
    Maximum Average Forward Rectified
    Current Tc=100
    (Total Device 2x5.0A=10.0A)
    Peak Forward Surge Current, 8.3ms single Half
    sine-wave superimposed on rated load (JEDEC
    method)
    Maximum Instantaneous Forward Voltage
    @5.0A
    (Per Diode/Per Leg)
    Maximum DC Reverse Current @TJ=25
    At Rated DC Blocking Voltage @TJ=125
    Maximum Reverse Recovery Time (Note1)
    Typical Junction Capacitance (Note 2)
    Typical Thermal Resistance (Note 3)
    Operating Junction and Storage
    Temperature Range
    VRRM
    VRMS
    VDC
    IF(AV)
    V
    V
    V
    A
    IFSM
    125
    A
    VF
    0.98
    1.3
    1.7
    V
    IR
    Trr
    CJ
    RθJC
    TJ,TSTG
    5.0
    100
    35
    65
    1.5
    -55 to +150
    μA
    μA
    nS
    pF
    ℃/W
    Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
    Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
    Note:(3)Thermal Resistance junction to case.
    Rev.08T
    ? 1995 Thinki Semiconductor Co., Ltd.
    Page 1/2
    http://www.thinkisemi.com.tw/
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